The theoretical direct-band-gap optical gain of Germanium nanowires

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Direct-gap photoluminescence from germanium nanowires

Yoko Kawamura,3 Kevin C. Y. Huang,1 Shruti V. Thombare,1 Shu Hu,1 Marika Gunji,1 Toyofumi Ishikawa,3 Mark L. Brongersma,1,2 Kohei M. Itoh,3 and Paul C. McIntyre1,2,* 1Materials Science and Engineering, Stanford University, Stanford, California 94305 2Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 3School of Fundamental Science and Technology, Keio Uni...

متن کامل

Direct Band Gap Wurtzite Gallium Phosphide Nanowires

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexago...

متن کامل

Direct Synthesis of Hyperdoped Germanium Nanowires

A low-temperature chemical vapor growth of Ge nanowires using Ga as seed material is demonstrated. The structural and chemical analysis reveals the homogeneous incorporation of ∼3.5 at. % Ga in the Ge nanowires. The Ga-containing Ge nanowires behave like metallic conductors with a resistivity of about ∼300 μΩcm due to Ga hyperdoping with electronic contributions of one-third of the incorporated...

متن کامل

Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain.

Direct-gap gain up to 850 cm(-1) at 0.74 eV is measured and modeled in optically pumped Ge-on-Si layers for photoexcited carrier densities of 2.0 × 10(20) cm(-3). The gain spectra are correlated to carrier density via plasma-frequency determinations from reflection spectra. Despite significant gain, optical amplification cannot take place, because the carriers also generate pump-induced absorpt...

متن کامل

Thickness effect on the band gap and optical properties of germanium thin films

The band gap and optical properties dielectric functions and optical constants of Ge thin films with various thicknesses below 50 nm, which were synthesized with electron beam evaporation technique, have been determined using spectroscopic ellipsometry and UV-visible spectrophotometry. The optical properties are well described with the Forouhi–Bloomer model. Both the band gap and optical proper...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Scientific Reports

سال: 2020

ISSN: 2045-2322

DOI: 10.1038/s41598-019-56765-5